PART |
Description |
Maker |
BF998A BF998B BF998RA BF998RAW BF998RB BF998RBW BF |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS - Fieldeffect四极管,耗尽 N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode RES,Metal Glaze,33.2Ohms,200WV,1 /-% Tol,-100,100ppm-TC,1210-Case RoHS Compliant: No N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode From old datasheet system
|
Vishay Intertechnology, Inc. Vishay Intertechnology,Inc. Vishay Telefunken VISAY[Vishay Siliconix]
|
BF995B BF995A BF995 |
ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode From old datasheet system N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
|
Vishay Intertechnology,Inc. VISAY[Vishay Siliconix]
|
BF1205 |
Dual N-channel dual gate MOS-FET
|
NXP Semiconductors
|
BF961 |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode From old datasheet system N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode
|
Vishay Telefunken
|
BF991 |
N-channel dual-gate MOS-FET
|
Philips Semiconductors
|
BF996S |
N-channel dual-gate MOS-FET
|
NXP Semiconductors Philips Semiconductors
|
3SK322 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi Semiconductor
|
BF966 |
N-Channel Dual Gate MOS Fieldeffect Tetrod
|
Telefunken
|
3SK297ZP-TL-E 3SK297 |
Silicon N-Channel Dual Gate MOS FET
|
Renesas Electronics Corporation
|
BF1202WR BF1202R BF1202 |
N-channel dual-gate PoLo MOS-FETs
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
3SK103 |
Silicon N-Channel Dual Gate MOS FET
|
ETC
|